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Semiconductors
Published in: Semiconductors 2/2013

01-02-2013 | IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012

Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers

Authors: V. I. Vdovin, E. V. Ubyivovk, O. F. Vyvenko

Published in: Semiconductors | Issue 2/2013

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previous article Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers
next article Optical properties of silicon with a high content of boron

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Metadata
Title
Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers
Authors
V. I. Vdovin
E. V. Ubyivovk
O. F. Vyvenko
Publication date
01-02-2013
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 2/2013
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378261302022X

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