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Published in: Journal of Materials Science: Materials in Electronics 9/2024

01-03-2024

Remarkable improvement of energy storage performance of Gd2O3-doped BNT-based relaxor ferroelectric ceramics

Authors: Hongjuan Wen, Xiusheng Wu, Zhengquan Jin, Sijia Shi, Jufang Cao, Naiji Zhou, Yujia Huang

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2024

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Abstract

Bi0.5Na0.5TiO3 (BNT) is a lead-free ferroelectric ceramic that has received much attention in recent years. However, the pure BNT presents a tetragonal structure with considerable remanent polarization at room temperature, which lead to its low energy storage efficiency thus limiting its application in energy storage. In this paper, on the basis of the introduction of Ba0.3Sr0.7TiO3 (BST), NaNbO3 (NN) into BNT to form a relaxor ferroelectric, Gd2O3 is further doped to refine grain and reduce oxygen vacancy concentration thereby improving the breakdown strength, which is beneficial to improve its energy storage performance. A series of ceramic samples of 0.9 (0.5BNT-0.5BST)-0.1NN + xwt%Gd (x = 0, 0.5, 1, 2.5, 3) were prepared by the solid-state reaction method. The effect of Gd2O3 on the microstructure and electrical properties of the systems was investigated. The results show that a suitable doping level of Gd2O3 can significantly refine the grains and improve the breakdown strength of the system. For x = 2.5 ceramic sample obtained a high energy storage density of Wrec = 4.86 J/cm3 and an energy storage efficiency of η = 86% at 250 kV/cm. Furthermore, this sample exhibited a stable discharge density (Wd ≥ 1.44 J/cm3) and an ultra-fast discharge rate (t0.9 ≤ 0.056 µs) in the temperature range of 140 kV/cm, 40∼140 °C.

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Appendix
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Metadata
Title
Remarkable improvement of energy storage performance of Gd2O3-doped BNT-based relaxor ferroelectric ceramics
Authors
Hongjuan Wen
Xiusheng Wu
Zhengquan Jin
Sijia Shi
Jufang Cao
Naiji Zhou
Yujia Huang
Publication date
01-03-2024
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2024
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-024-12403-z

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