Advertisement
Published in:
26-05-2018
Resistance switching behavior and ferroelectric properties of the Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03Zn x O3 thin films
Published in: Journal of Materials Science: Materials in Electronics | Issue 14/2018
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03Zn
x
O3 (BHSFMZn
x
O) thin films were prepared by a chemical solution deposition method on the fluorine doped tin oxide (FTO) substrates. The effects of Sr, Ho, Mn and Zn co-doping on the crystal structure, defects, leakage current, resistance switching behavior and ferroelectric properties of the BiFeO3 films were investigated. The results show that Zn2+ doped BHSFMO films lead to the transformation of the preferred orientation from (110) to (100). The oxygen vacancies, \({(Zn{\prime _{Fe}} - V_{O}^{{ \cdot \cdot }})^ \cdot },\) leakage current density and the Schottky barrier of BHSFMZn
x
O films were increased with the increase of Zn2+ doping. The BHSFMZn0.04O film shows the highest resistance switching ratio (18.6) at 200 kV/cm. The BHSFMZn0.01O film have larger remanent polarization and switching current (P
r
~ 135 µC/cm2 and I
S
~ 1.5 mA), and the relatively low coercive field and the polarization leakage current (E
c
~ 350 kV/cm and I
L
~ 0.14 mA). Therefore, the resistance switching behavior or ferroelectric properties can be obtained by controlling the doping amount of Zn2+.