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Published in:
01-04-2015
Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors
Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2015
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Abstract
V-doped zinc oxide (Zn1−xVxO, 0 ≤ x ≤ 0.1) diluted magnetic semiconductors have been synthesized by using a sol–gel method. We systematically investigated effects of V-doping concentration on the structural, magnetic and optical properties of Zn1−xVxO nanoparticles. All diffraction peaks could be indexed to wurtzite structure of ZnO with V concentration of less than or equal to 3 at.%. Secondary phase of Zn3V3O8 emerged when V concentration was higher than 3 at.%. Magnetic measurements indicated that the samples with V concentration less than or equal to 3 at.% were ferromagnetic at room temperature. Saturated magnetization of Zn1−xVxO nanoparticles increased with increase of V doping concentration. The results of Raman and photoluminescence testified that the ferromagnetism in Zn1−xVxO nanoparticles was probably originated from oxygen vacancies.