Issue 4/2015
Content (25 Articles)
Formation of S2 “quasi-molecules” in sulfur-doped silicon
V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov
On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter
A. S. Parshin, A. Yu. Igumenov, Yu. L. Mikhlin, O. P. Pchelyakov, A. I. Nikiforov, V. A. Timofeev
Low-temperature conductivity in CuGaS2 single crystals
N. A. Abdullaev, Kh. V. Aliguliyeva, L. N. Aliyeva, I. Qasimoglu, T. G. Kerimova
Temperature dependence of the carrier lifetime in Cd x Hg1 − x Te narrow-gap solid solutions with consideration for Auger processes
N. L. Bazhenov, K. D. Mynbaev, G. G. Zegrya
Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanisms
M. A. Ormont, I. P. Zvyagin
Surface plasmon polaritons in a composite system of porous silicon and gold
J. S. Vainshtein, D. N. Goryachev, O. S. Ken, O. M. Sreseli
Energy transfer from Tb3+ to Eu2+ in Ga2S3:(Eu2+, Tb3+) crystals
O. B. Tagiev, Kh. B. Ganbarova
Development of a differential method for analyzing the luminescence spectra of semiconductors
A. M. Emel’yanov
Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods
A. V. Alpatov, S. P. Vikhrov, N. V. Rybina
Temperature dependences of the contact resistivity in ohmic contacts to n +-InN
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, P. N. Brunkov, V. N. Jmerik, S. V. Ivanov, L. M. Kapitanchuk, R. V. Konakova, V. P. Klad’ko, P. N. Romanets, P. O. Saja, N. V. Safryuk, V. N. Sheremet
Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide
E. I. Goldman, A. I. Levashova, S. A. Levashov, G. V. Chucheva
Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy
A. A. Lazarenko, E. V. Nikitina, M. S. Sobolev, E. V. Pirogov, D. V. Denisov, A. Yu. Egorov
Quantum Hall effect in semiconductor systems with quantum dots and antidots
Ya. M. Beltukov, A. A. Greshnov
Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals
A. V. Gert, I. N. Yassievich
Conditions of steady switching in phase-transition memory cells
A. I. Popov, S. M. Salnikov, Yu. V. Anufriev
Plasma waves in a graphene-based superlattice in the presence of a high static electric field
S. Yu. Glazov, A. A. Kovalev, N. E. Mescheryakova
Electroluminescent 1.5-μm light-emitting diodes based on p +-Si/NC β-FeSi2/n-Si structures
T. S. Shamirzaev, N. G. Galkin, E. A. Chusovitin, D. L. Goroshko, A. V. Shevlyagin, A. K. Gutakovski, A. A. Saranin, A. V. Latyshev
A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT
Devashish Pandey, T. R. Lenka
Surface-barrier photoconverters with graded-gap layers in the space-charge region
Yu. N. Bobrenko, S. Yu. Pavelets, A. M. Pavelets, T. V. Semikina, N. V. Yaroshenko
Admittance spectroscopy of solar cells based on GaPNAs layers
A. I. Baranov, A. S. Gudovskikh, K. S. Zelentsov, E. V. Nikitina, A. Yu. Egorov
Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors
N. V. Tkach, Ju. A. Seti, Yu. B. Grynyshyn
Irradiation of 4H-SiC UV detectors with heavy ions
E. V. Kalinina, A. A. Lebedev, E. Bogdanova, B. Berenquier, L. Ottaviani, G. N. Violina, V. A. Skuratov
Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties
A. S. Saidov, Sh. N. Usmonov, M. S. Saidov
Anisotropic shaping of macroporous silicon
E. V. Astrova, A. V. Parfeneva, G. V. Li, Yu. A. Zharova
MBE growth of GaP on a Si substrate
M. S. Sobolev, A. A. Lazarenko, E. V. Nikitina, E. V. Pirogov, A. S. Gudovskikh, A. Yu. Egorov