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Semiconductors
Published in: Semiconductors 4/2015

01-04-2015 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy

Authors: A. A. Lazarenko, E. V. Nikitina, M. S. Sobolev, E. V. Pirogov, D. V. Denisov, A. Yu. Egorov

Published in: Semiconductors | Issue 4/2015

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previous article Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide
next article Quantum Hall effect in semiconductor systems with quantum dots and antidots

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Metadata
Title
Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy
Authors
A. A. Lazarenko
E. V. Nikitina
M. S. Sobolev
E. V. Pirogov
D. V. Denisov
A. Yu. Egorov
Publication date
01-04-2015
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 4/2015
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782615040144

Other articles of this Issue 4/2015

Semiconductors 4/2015 Go to the issue

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Quantum Hall effect in semiconductor systems with quantum dots and antidots

Surfaces, Interfaces, and Thin Films

Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods

Physics of Semiconductor Devices

Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide

Fabrication, Treatment, and Testing of Materials and Structures

Anisotropic shaping of macroporous silicon

Electronic Properties of Semiconductors

Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanisms

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