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Acta Mechanica

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08-11-2023 | Original Paper

Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects

Authors: Chunyu Xu, Peijun Wei, Zibo Wei, Xiao Guo

Published in: Acta Mechanica | Issue 2/2024

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Abstract

Shear horizontal waves propagating in a p-type Si substrate with a transversely isotropic piezoelectric semiconductor n-type ZnO covered layer is analyzed in this paper. The PN heterojunction, which is created between the n-type ZnO covered layer and the p-type Si substrate, can be considered as an electrically gradient layer due to the drastic changes of the steady-state carrier concentrations. The state transfer equation and the laminated model are used to treat the inhomogeneity. The effects of the PN heterojunction and doping density on the dispersion and attenuation curves and the wave mode shapes of the shear horizontal waves are investigated. The results show that the effects of PN heterojunction on the attenuation curve are more obvious than that on the dispersion curve, especially for the second-order modes in the relative higher frequency. Moreover, the effects of PN heterojunction are closely related to the doping density of the ZnO covered layer, but not nearly related to the doping density of the Si substrate. In addition, the mode shapes of the electric potential, electric displacement, hole and electron perturbation density and the hole and electron current density are affected evidently by the existence of PN heterojunction.

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Title: Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects
Authors: Chunyu Xu
Peijun Wei
Zibo Wei
Xiao Guo
Publication date: 08-11-2023
Publisher: Springer Vienna
Published in: Acta Mechanica / Issue 2/2024
Print ISSN: 0001-5970
Electronic ISSN: 1619-6937
DOI: https://doi.org/10.1007/s00707-023-03771-4

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Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects

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