SIMS-Auger Analysis of Organic Films on Gallium Arsenide

Gallium arsenide is proposed as a suitable substance to prepare photo-electrodes which effectively convert photon energy to chemical energy through photo-assisted electrode reactions. However, the semiconductor,having band gap below 2 eV,is easily corroded by the electrolyte when exposed to light[1]. To develop a protective organic film on the electrode surface it is recommended for the purpose to make the surface anti-corrosive , but material of low surface energy such as GaAs is difficult to cover uniformly with organic polymer film thin enough to allow electrons to be exchanged between electrode surface and electrolyte.