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Semiconductors
Published in: Semiconductors 12/2015

01-12-2015 | XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015

Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

Authors: Yu. G. Sadofyev, V. P. Martovitsky, A. V. Klekovkin, V. V. Saraykin, I. S. Vasil’evskii

Published in: Semiconductors | Issue 12/2015

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previous article On the role of negative effective masses in the formation of the conductivity of semiconductor superlattices
next article Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides

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Metadata
Title
Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers
Authors
Yu. G. Sadofyev
V. P. Martovitsky
A. V. Klekovkin
V. V. Saraykin
I. S. Vasil’evskii
Publication date
01-12-2015
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2015
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782615120179

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Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides

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On the role of negative effective masses in the formation of the conductivity of semiconductor superlattices

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