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Semiconductors
Published in: Semiconductors 6/2011

01-06-2011 | Spectroscopy, Interaction with Radiation

Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures

Authors: K. D. Shcherbachev, V. T. Bublik, V. N. Mordkovich, D. M. Pazhin

Published in: Semiconductors | Issue 6/2011

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previous article Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters
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Metadata
Title
Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures
Authors
K. D. Shcherbachev
V. T. Bublik
V. N. Mordkovich
D. M. Pazhin
Publication date
01-06-2011
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 6/2011
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782611060224

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Surfaces, Interfaces, and Thin Films

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