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Semiconductors
Published in: Semiconductors 6/2011

01-06-2011 | Spectroscopy, Interaction with Radiation

Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters

Authors: A. V. Ershov, D. I. Tetelbaum, I. A. Chugrov, A. I. Mashin, A. N. Mikhaylov, A. V. Nezhdanov, A. A. Ershov, I. A. Karabanova

Published in: Semiconductors | Issue 6/2011

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previous article Vacancy model of micropipe annihilation in epitaxial silicon carbide layers
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Metadata
Title
Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters
Authors
A. V. Ershov
D. I. Tetelbaum
I. A. Chugrov
A. I. Mashin
A. N. Mikhaylov
A. V. Nezhdanov
A. A. Ershov
I. A. Karabanova
Publication date
01-06-2011
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 6/2011
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782611060108

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