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Semiconductors
Published in: Semiconductors 6/2011

01-06-2011 | Physics Of Semiconductor Devices

Matrices of 960-nm vertical-cavity surface-emitting lasers

Authors: N. A. Maleev, A. G. Kuzmenkov, A. S. Shulenkov, S. A. Blokhin, M. M. Kulagina, Yu. M. Zadiranov, V. G. Tikhomirov, A. G. Gladyshev, A. M. Nadtochiy, E. V. Nikitina, J. A. Lott, V. N. Svede-Shvets, N. N. Ledentsov, V. M. Ustinov

Published in: Semiconductors | Issue 6/2011

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previous article Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds
next article Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

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Metadata
Title
Matrices of 960-nm vertical-cavity surface-emitting lasers
Authors
N. A. Maleev
A. G. Kuzmenkov
A. S. Shulenkov
S. A. Blokhin
M. M. Kulagina
Yu. M. Zadiranov
V. G. Tikhomirov
A. G. Gladyshev
A. M. Nadtochiy
E. V. Nikitina
J. A. Lott
V. N. Svede-Shvets
N. N. Ledentsov
V. M. Ustinov
Publication date
01-06-2011
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 6/2011
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782611060133

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Model of boron diffusion from gas phase in silicon carbide

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