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Semiconductors
Published in: Semiconductors 6/2011

01-06-2011 | Electronic Properties of Semiconductors

Vacancy model of micropipe annihilation in epitaxial silicon carbide layers

Authors: S. Yu. Davydov, A. A. Lebedev

Published in: Semiconductors | Issue 6/2011

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previous article Energy of impurity resonance states in lead telluride with different contents of thallium impurity
next article Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters

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Metadata
Title
Vacancy model of micropipe annihilation in epitaxial silicon carbide layers
Authors
S. Yu. Davydov
A. A. Lebedev
Publication date
01-06-2011
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 6/2011
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378261106008X

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Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

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