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Journal of Materials Science: Materials in Electronics

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02-11-2015

Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

Authors: Yiquan Dai, Shuiming Li, Hongwei Gao, Weihui Wang, Qian Sun, Qing Peng, Chengqun Gui, Zhengfang Qian, Sheng Liu

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2016

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Abstract

We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation.

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Title: Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling
Authors: Yiquan Dai
Shuiming Li
Hongwei Gao
Weihui Wang
Qian Sun
Qing Peng
Chengqun Gui
Zhengfang Qian
Sheng Liu
Publication date: 02-11-2015
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 2/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-015-3984-1

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