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Engineered Substrates for Advanced CMOS Technology Nodes and More-Than-Moore Applications Read chapter Read first chapter

2014 | OriginalPaper | Chapter

Structural and Luminescent Properties of Carbonized Silicon Oxide Thin Layers

Author : Andrii V. Vasin

Published in: Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Publisher: Springer International Publishing

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Abstract

A critical review of structural and white light emission properties of carbonized silicon oxide thin layers (SiOC) is presented. Methods of synthesis of the SiOC layers, effects of thermal treatments, spectral properties and degradation of photoluminescence are analyzed. SiOC layers were synthesized by two methods: (1) magnetron deposition of a-SiC:H thin films on Si wafer followed by oxidation in flow oxygen or water vapor at temperature of 450–600 °C; (2) thermal treatment of porous silicon layer (grown on p-type Si wafer by anodization in HF/C2H5OH solution) in flow of acetylene (850–1050 °C) followed by oxidation in flow of water vapor (600–850 °C). Working hypothesis is that main contribution in broad band photoluminescence (400–700 nm) of the materials originates from carbon nano-clusters. Hence, original experimental data and other published data are discussed in frame of this working hypothesis.

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Metadata
Title
Structural and Luminescent Properties of Carbonized Silicon Oxide Thin Layers
Author
Andrii V. Vasin
Copyright Year
2014
Book
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Print ISBN: 978-3-319-08803-7

Electronic ISBN: 978-3-319-08804-4

Copyright Year: 2014

DOI
https://doi.org/10.1007/978-3-319-08804-4_14