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Published in:
02-09-2016
Studies of physical properties of the Al doped ZnS thin films prepared by Spray
Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2017
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Abstract
Undoped and Al doped ZnS were prepared via an efficient and low cost chemical co-precipitation method using Spray. In the present we study effect of Al concentration on structural, optical and electrical properties is studied using X-ray diffraction (XRD), the UV–visible, Fourier transform infrared spectroscopy and the impedance analyzer. The XRD shows that crystalline sizes which are in the range 22–59 nm which it increases with the highest values of Aluminium concentration. The optical measurements revealed that as the ZnS undoped and Al doping ZnS concentration increases the band gap decreases in the range of 3.72 to 3.61 eV thereby improving the optical properties of the ZnS thin film. Then, the impedance analyzer indicate firstly that the conductivity increase with the increasing of the doping concentration, the temperature and the frequency. On the other hand, the calculated values of the activation energy decrease with increasing of concentration of Al doping.