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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 1/2020

14-11-2019

Study of n-type doping in germanium by temperature based PF+ implantation

Authors: Jinbiao Liu, Guilei Wang, Junfeng Li, Zhenzhen Kong, Henry H. Radamson

Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2020

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Abstract

Incorporation of P in germanium was studied by using PF+ molecular implantation in a range from room temperature to 400 °C. The presence of F acted as a barrier for P in-diffusion and resulted in higher activation of P at room temperature. In addition, it is found that when the implantation is performed at 400 °C, the residual defects are stable and the diffusion of P can be blocked during activation annealing. Therefore, the final junction depth could be well controlled by the implantation process itself. This method is meaningful for the shallow junction formation in sub 14-nm Ge-based FinFETs or high-performance photodetectors.
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Metadata
Title
Study of n-type doping in germanium by temperature based PF+ implantation
Authors
Jinbiao Liu
Guilei Wang
Junfeng Li
Zhenzhen Kong
Henry H. Radamson
Publication date
14-11-2019
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 1/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02522-3

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