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Semiconductors
Published in: Semiconductors 16/2019

01-12-2019 | NANOSTRUCTURES TECHNOLOGY

Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

Authors: K. N. Astankova, E. B. Gorokhov, I. A. Azarov, V. A. Volodin, A. V. Latyshev

Published in: Semiconductors | Issue 16/2019

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Abstract

Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO2{Ge-NCs} heterolayers. When removal the GeO2 matrix from a thick GeO2{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.
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Literature
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E. B. Gorokhov, V. A. Volodin, and M. P. Slabuka, in Proceedings of 21th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, 2013), p. 178.
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Metadata
Title
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
Authors
K. N. Astankova
E. B. Gorokhov
I. A. Azarov
V. A. Volodin
A. V. Latyshev
Publication date
01-12-2019
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 16/2019
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782619120030

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