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01-08-2012 | Fabrication, Treatment, and Testing of Materials and Structures

Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p ⁺-layer

Authors: A. S. Lenshin, V. M. Kashkarov, P. V. Seredin, D. A. Minakov, B. L. Agapov, M. A. Kuznetsova, V. A. Moshnikov, E. P. Domashevskaya

Published in: Semiconductors | Issue 8/2012

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Title: Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p +-layer
Authors: A. S. Lenshin
V. M. Kashkarov
P. V. Seredin
D. A. Minakov
B. L. Agapov
M. A. Kuznetsova
V. A. Moshnikov
E. P. Domashevskaya
Publication date: 01-08-2012
Publisher: SP MAIK Nauka/Interperiodica
Published in: Semiconductors / Issue 8/2012
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782612080131

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