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2021 | OriginalPaper | Chapter

3. Superconducting Gap Classification on High-Symmetry Planes

Author : Dr. Shuntaro Sumita

Published in: Modern Classification Theory of Superconducting Gap Nodes

Publisher: Springer Singapore

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Abstract

In this chapter, using the classification theory introduced in Chap. 2, we completely classify the superconducting gap structures on high-symmetry (namely mirror- or glide-invariant) planes in the BZ. From the group-theoretical analysis, the classification tables for all possible symmetries are given in Sect. 3.1. The tables clarify the condition for nontrivial line nodes or gap opening on the BZ boundary, which are protected by nonsymmorphic symmetry. Next, in Sect. 3.2, we see a one-to-one correspondence between the group-theoretical and topological classification: all crystal-symmetry-protected line nodes on high-symmetry planes are also characterized by 0D and/or 1D topological numbers. Furthermore, we discuss the possibility of Majorana flat bands as surface states corresponding to the 1D topological number. Finally, as an example, we demonstrate nonsymmorphic-symmetry-protected gap structures in the model of Sr\(_2\)IrO\(_4\) (Sect. 3.3).

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Appendix
Available only for authorised users
Footnotes
1
In this thesis, we do not discuss the FFLO superconductivity in the \(-+-+\) state [10], because it digresses from the main subject.
 
2
The ASOC is derived from atomic LS coupling [59, 60]. In our effective \(J_{\text {eff}} = 1/2\) model, therefore, the ASOC takes account of the effect of LS-type SOC. Since multiorbital electronic structure does not play any essential role in our results, we will obtain qualitatively the same results in the 5d multiorbital model.
 
3
Because of the \(\pi /4\) rotation around the principal (c) axis, the \(d_{xy}\)-wave superconductivity corresponds to the \(d_{x^2 - y^2}\)-wave state in cuprates.
 
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Metadata
Title
Superconducting Gap Classification on High-Symmetry Planes
Author
Dr. Shuntaro Sumita
Copyright Year
2021
Publisher
Springer Singapore
DOI
https://doi.org/10.1007/978-981-33-4264-4_3

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