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Published in: Journal of Materials Engineering and Performance 8/2012

01-08-2012

Suppression of Interdiffusion in Copper/Tin Thin Films

Authors: Harald Etschmaier, Holger Torwesten, Hannes Eder, Peter Hadley

Published in: Journal of Materials Engineering and Performance | Issue 8/2012

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Abstract

Copper/tin thin film couples are often used in microelectronics assembly as device backside coatings for die attach and also as circuit board coatings to maintain solderability. In this article, we report a temperature treatment that slows down the room temperature reaction of these two metals and therefore can extend the storage life of the devices significantly. It was found by x-ray diffraction that during an anneal at 473 K for 1 minute a thin layer of the Cu/Sn ε-phase is formed which introduces an additional interface to the system. The diffusion suppressing effect of this treatment was studied by focused ion beam microscopy.

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Metadata
Title
Suppression of Interdiffusion in Copper/Tin Thin Films
Authors
Harald Etschmaier
Holger Torwesten
Hannes Eder
Peter Hadley
Publication date
01-08-2012
Publisher
Springer US
Published in
Journal of Materials Engineering and Performance / Issue 8/2012
Print ISSN: 1059-9495
Electronic ISSN: 1544-1024
DOI
https://doi.org/10.1007/s11665-011-0090-2

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