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Published in: Journal of Materials Science: Materials in Electronics 1/2024

01-01-2024

Synthesis and study of microstructural, optical and electrical properties of Na-doped Cu2ZnSnS4 thin films via thermal evaporation

Authors: M. Marzougui, F. Antoni, M. Ben Rabeh, M. Kanzari

Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2024

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Abstract

Non-doped and sodium-doped Cu2ZnSnS4 (CZTS) thin films deposited on heated glass substrates at 100 °C have been successfully fabricated by the thermal evaporation technique, after what all layers were annealed under sulfur atmosphere at 400 °C. The structural properties of all layers were analyzed using X-ray diffraction and Raman spectroscopy methods. These analysis reveals a polycrystalline with kesterite structure and preferential orientation along the (112) plane for all samples. The surface morphology of all samples was investigated using atomic force microscopy (AFM). The obtained topographies show an improvement of the crystalline quality of post-sulfurized Na-doped CZTS films. Further, the optical measurement recorded by UV–Vis spectroscopy reveals that the direct band gap energy of post-sulfurized Na-doped CZTS films were in the range of 1.56 eV and 1.61 eV. Electrically, all films show p-type electrical conductivity, measured by the hot probe method. In addition, Hall Effect measurements show that Na-doped CZTS thin films exhibit lower resistivity and mobility, as well as higher carrier concentration, than Non-doped films. We can conclude that doping CZTS with Na makes it a better photovoltaic material, and that it is suitable as an absorber layer.

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Metadata
Title
Synthesis and study of microstructural, optical and electrical properties of Na-doped Cu2ZnSnS4 thin films via thermal evaporation
Authors
M. Marzougui
F. Antoni
M. Ben Rabeh
M. Kanzari
Publication date
01-01-2024
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 1/2024
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-023-11738-3

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