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Published in:
Surface Phenomena and Exoemission Read chapter Read first chapter

2023 | OriginalPaper | Chapter

9. TAPE of Si Wafers

Author : Yoshihiro Momose

Published in: Exoemission from Processed Solid Surfaces and Gas Adsorption

Publisher: Springer Nature Singapore

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Abstract

We first outline the effect of the excitation method and gas adsorption (such as O2 and H2O) on the TSEE glow curves of the SiO2 layer. We then describe TAPE of Si wafers obtained under temperature scans and incident light wavelength scans. We also report the characteristics (activation energy, photothreshold, and total counts of emitted electrons) of Si samples with an oxide layer and Si samples implanted with H, Si, and Ar ions.

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previous chapter TAPE of Rolled and Scratched Fe Metal Surfaces
next chapter TPPE Characteristics of Various Metal Surfaces
Literature
1.
K. Arai, H. Imai, H. Hosono, Y. Abe, H. Imagawa, Two-photon processes in defect formation by excimer lasers in synthetic silica glass. Appl. Phys. Lett. 53, 1891–1893 (1988)CrossRef
2.
J. Drenckhan, H. Gross, H. Glaefeke, Investigation of exo-electron emission of clean semiconductor surfaces. Phys. Stat. Sol. A 2, K201 (1970)CrossRef
3.
J. Drenckhan, H. Gross, H. Glaefeke, Electron emission from surface states. Phys. Stat. Sol. A 2, K79-80 (1970)CrossRef
4.
J. Drenckhan, H. Gross, H. Glaefeke, The mechanism of exo-electron emission after excitation with electrons. Phys. Stat. Sol. A 2, K51–K54 (1970)CrossRef
5.
T.E. Fischer, Determination of semiconductor surface properties by means of photoelectric emission. Surf. Sci. 13, 30–51 (1969)CrossRef
6.
G.W. Gobeli, F.G. Allen, Direct and indirect excitation processes in photoelectric emission from silicon. Phys. Rev. 127, 141–149 (1962)CrossRef
7.
F.J. Grunthaner, P.J. Grunthaner, Chemical and electronic structure of the SiO2/Si interface. Mater. Sci. Rep. 1, 65–160 (1986)CrossRef
8.
G. Kanzler, Zur frage der elektronennach-und induzierten photoemission von germanium und silizium. Zeitschrift Physik 164, 120–125 (1961)CrossRef
9.
10.
I.V. Krylova, V.I. Svitov, Role of adsorbed water and oxygen in exoemission of electrons from Si single crystals. Sov. Phys. Semicond. 7, 295–296 (1973)
11.
Y. Momose, S. Kosaka, T. Sakurai, M. Yanagisawa, K. Nakayama, Photoelectric threshold of silicon wafer surfaces implanted with H, Si and Ar ions. Surf. Interface Anal. 42, 1333–1337 (2010)CrossRef
12.
Y. Momose, A. Satou, T. Sakurai, K. Nakayama, Characteristics of thermo- and photo-stimulated electron emission from silicon wafers. Surf. Interface Anal. 40(3–4), 620–622 (2008)CrossRef
13.
Sakurai T, Momose Y, Kudou M, Nakayama K (2005) Photoelectron emission technique for the surface analysis of silicon wafer covered with oxide film. MRS Symp. Proc. 864, E9.34.1–E9.34.6
14.
Scharmann A (1973) Exoelectron emission, phenomena, and parameters. In: Proceedings of the 4th international symposium on exoelectron emission and dosimetry. Liblice, pp 12–29
15.
Scharmann A, Kriegseis W, Seibert J (1970) Surface effects of exoelectron emitting solids. In: Proceedings of the third international symposium on exoelectrons, vol 80. PTB–Mitteilungen, Braunschweig, pp 318–354
16.
M. Schmidt, H. Glaefeke, J. Drenckhan, W. Wild, Eine neue methode zur bestimmung von zerstörungs-bzw. ionenimplantationsprofilen in isolatorschichten. Rad Effects 17, 185–190 (1973)CrossRef
17.
C. Sebenne, D. Bolmont, G. Guichar et al., Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface. Phys. Rev. B 12, 3280–3285 (1975)CrossRef
18.
K. Seeger, Verzögerte elektronenemission und äußerer photoeffekt von germanium nach elektronenbeschuß. Zeitschrift Physik 149, 453–470 (1957)CrossRef
19.
R. Seidl, Die exoelektronenemission von germanium. Zeitschrift Physik 157, 568–575 (1960)
Metadata
Title
TAPE of Si Wafers
Author
Yoshihiro Momose
Copyright Year
2023
Publisher
Springer Nature Singapore
Book
Exoemission from Processed Solid Surfaces and Gas Adsorption

Print ISBN: 978-981-19-6947-8

Electronic ISBN: 978-981-19-6948-5

Copyright Year: 2023

DOI
https://doi.org/10.1007/978-981-19-6948-5_9

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