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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 4/2019

09-01-2019

Temperature dependant electronic charge transport characteristics at MX2 (M = Mo, W; X = S, Se)/Si heterojunction devices

Author: C. K. Sumesh

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2019

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Abstract

Nanosheets of two dimensional (2D) transition metal dichalcogenides (WS2, MoS2 and WSe2) have been synthesized by two stage solvothermal mediated sonochemical exfoliation method. The as-synthesized high quality and stable dispersions in the form of few layer nanosheets were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy. The nanosheets were deposited on p-type silicon wafer to from WS2/p-Si, MoS2/p-Si, and WSe2/p-Si, heterojunction diodes. Temperature dependent transport properties and conduction behavior were analyzed using I–V characteristics. Thermionic emission transport model with T0 affected current transport mechanism across the junction was found as the most possible current transport model for all the three prepared diodes. The results provide an easy and large area preparation of 2D layered transition metal dichalcogenide semiconductors for unique electro-optical applications.
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Metadata
Title
Temperature dependant electronic charge transport characteristics at MX2 (M = Mo, W; X = S, Se)/Si heterojunction devices
Author
C. K. Sumesh
Publication date
09-01-2019
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-00703-8

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