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Journal of Materials Science: Materials in Electronics

Published in:

06-03-2020

Temperature-dependent terahertz time-domain spectroscopy of 3D, 2D, and 0D semiconductor heterostructures

Authors: Alexander De Los Reyes, Hannah Bardolaza, John Daniel Vasquez, Neil Irvin Cabello, Lorenzo Lopez Jr., Che-Yung Chang, Armando Somintac, Arnel Salvador, Der-Jun Jang, Elmer Estacio

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2020

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Abstract

Carrier transport in semiconductors with different dimensionalities, i.e., 3D (bulk), 2D (QW), and 0D (QD), were investigated via temperature-dependent terahertz time-domain spectroscopy (THz-TDS). The optical properties and recombination dynamics in the samples were probed via photoluminescence spectroscopy. The temperature-dependence of the THz emission from the samples was explained in the context of the drift-diffusion model using the dominant THz radiation mechanism. The THz emission from diffusion-type THz emitters such as p- and n-InAs decreases as temperature increases due to mobility decrease. Conversely, the THz emission from drift-type THz emitters such as SI-GaAs, GaAs QW, and InAs QD was found to increase with temperature due to the increase in the driving electric field. In summary, THz-TDS can be utilized to gain qualitative insights on the temperature-dependent transport characteristics and establish dominant THz radiation mechanisms.

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Title: Temperature-dependent terahertz time-domain spectroscopy of 3D, 2D, and 0D semiconductor heterostructures
Authors: Alexander De Los Reyes
Hannah Bardolaza
John Daniel Vasquez
Neil Irvin Cabello
Lorenzo Lopez Jr.
Che-Yung Chang
Armando Somintac
Arnel Salvador
Der-Jun Jang
Elmer Estacio
Publication date: 06-03-2020
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 8/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-020-03188-y

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