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Semiconductors

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01-02-2006 | Low-Dimensional Systems

The band structure and photoluminescence in a Ge_0.8Si_0.2/Ge_0.1Si_0.9 superlattice with vertically correlated quantum dots

Authors: N. V. Sibirev, V. G. Talalaev, A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskiĭ, N. D. Zakharov, P. Werner

Published in: Semiconductors | Issue 2/2006

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previous article Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots

next article Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers

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Title: The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots
Authors: N. V. Sibirev
V. G. Talalaev
A. A. Tonkikh
G. E. Cirlin
V. G. Dubrovskiĭ
N. D. Zakharov
P. Werner
Publication date: 01-02-2006
Publisher: Nauka/Interperiodica
Published in: Semiconductors / Issue 2/2006
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782606020205

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Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components

The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type

A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon

Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration

Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots

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