Ausgabe 2/2006
Inhalt (23 Artikel)
The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon
V. V. Bolotov, G. N. Kamaev, A. V. Noskov, S. A. Chernyaev, V. E. Roslikov
Stability of the photoresponse of Cd1−x ZnxTe crystals
V. K. Komar, V. P. Mygal, S. V. Sulima, A. S. Phomin
Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type
V. A. Romaka, Yu. V. Stadnyk, M. G. Shelyapina, D. Fruchart, V. F. Chekurin, L. P. Romaka, Yu. K. Gorelenko
Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals
D. I. Bletskan, J. J. Madyar, V. N. Kabaciy
Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals
O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskiĭ, P. M. Fochuk, O. M. Strilchuk, S. G. Krylyuk, D. V. Korbutyak
Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components
Yu. V. Klevkov, V. P. Martovitskiĭ, V. S. Bagaev, V. S. Krivobok
Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor
V. A. Bogdanova, N. A. Davletkil’deev, N. A. Semikolenova, E. N. Sidorov
Photosensitivity of Pb1−x SnxTe:In films in the terahertz region of the spectrum
A. N. Akimov, V. G. Erkov, V. V. Kubarev, E. L. Molodtsova, A. É. Klimov, V. N. Shumskiĭ
Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration
M. F. Bulatov, Yu. N. Parkhomenko
A mechanism of variation in the electrical properties of polycrystalline p-PbSe films as a result of irradiation with α particles
Ya. P. Saliĭ
A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon
A. A. Evtukh, É. B. Kaganovich, É. G. Manoĭlov, N. A. Semenenko
Dynamics of the defects recharging in coarse-grained p-CdTe films
Kh. Kh. Ismailov, Zh. Zhanabergenov, Sh. A. Mirsagatov, S. Zh. Karazhanov
Methods for the doping of silicon layers in growth by sublimation MBE
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, D. V. Shengurov, S. A. Denisov
A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures
A. G. Zhdan, G. V. Chucheva, E. I. Goldman
Properties of the CuInS2 surface and the effect of organic layers
A. B. Verbitskiĭ, Ya. I. Vertsimakha, P. N. Lutsyk, S. L. Studzinskiĭ, S. Bereznev, J. Kois
Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation
V. A. Volodin, A. I. Yakimov, A. V. Dvurechenskiĭ, M. D. Efremov, A. I. Nikiforov, E. I. Gatskevich, G. D. Ivlev, G. Yu. Mikhalev
Persistent IR photoconductivity in InAs/GaAs structures with QD layers
V. A. Kul’bachinskiĭ, V. A. Rogozin, V. G. Kytin, R. A. Lunin, B. N. Zvonkov, Z. M. Dashevsky, V. A. Casian
Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots
S. I. Pokutniĭ
The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots
N. V. Sibirev, V. G. Talalaev, A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskiĭ, N. D. Zakharov, P. Werner
Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers
N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, O. A. Kuznetsov, D. N. Lobanov, A. V. Novikov, M. V. Shaleev
Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier
J. A. Berashevich, S. K. Lazarouk, V. E. Borisenko
Unusual photoelectric properties of polymeric composites containing heteropolynuclear complexes of transition metals
N. A. Davidenko, V. N. Kokozay, I. I. Davidenko, O. V. Nesterova, D. V. Shevchenko