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Published in: Journal of Materials Science: Materials in Electronics 3/2014

01-03-2014

The effective role of time in synthesising InN by chemical method at low temperature

Authors: M. A. Qaeed, K. Ibrahim, K. M. A. Saron, Q. N. Abdullah, Nezar G. Elfadill, Saleh H. Abud, Khaled M. Chahrour

Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2014

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Abstract

This study involves the synthesise of indium nitride (InN) nanoparticles at low temperature using a chemical method. Three samples were synthesised under different times to produce InN nanoparticle of high quality crystallinity. Results showed that the time of synthesise plays an important role for N enhancement in InN nanoparticle structure. The average diameters of cubic phase of InN nanoparticle were 16.5 nm. These properties support the use of InN as a potential material for the manufacture of highly efficient low cost solar cells.

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Literature
1.
go back to reference A.G. Bhuiyan, A. Hashimoto, A. Yamamoto, J. Appl. Phys. 94, 2779–2808 (2003)CrossRef A.G. Bhuiyan, A. Hashimoto, A. Yamamoto, J. Appl. Phys. 94, 2779–2808 (2003)CrossRef
4.
go back to reference J. Schormann, D. As, K. Lischka, P. Schley, R. Goldhahn, S. Li, W. Loffler, M. Hetterich, H. Kalt, Appl. Phys. Lett. 89, 261903–261903-3 (2006) CrossRef J. Schormann, D. As, K. Lischka, P. Schley, R. Goldhahn, S. Li, W. Loffler, M. Hetterich, H. Kalt, Appl. Phys. Lett. 89, 261903–261903-3 (2006) CrossRef
5.
6.
7.
go back to reference T.-T. Wang, P. Raghunath, Y.-F. Lu, Y.-C. Liu, C.-H. Chiou, M.C. Lin, Chem. Phys. Lett. 510, 126–130 (2011)CrossRef T.-T. Wang, P. Raghunath, Y.-F. Lu, Y.-C. Liu, C.-H. Chiou, M.C. Lin, Chem. Phys. Lett. 510, 126–130 (2011)CrossRef
8.
go back to reference H.B. Ahn, Y.H. Kim, M.D. Kim, C.S. Kim, J.Y. Lee, Chem. Phys. Lett. 499, 131–135 (2010)CrossRef H.B. Ahn, Y.H. Kim, M.D. Kim, C.S. Kim, J.Y. Lee, Chem. Phys. Lett. 499, 131–135 (2010)CrossRef
9.
go back to reference L.V. Stebounova, Y.E. Romanyuk, R.-G. Dengel, S.R. Leone, Chem. Phys. Lett. 443, 333–336 (2007)CrossRef L.V. Stebounova, Y.E. Romanyuk, R.-G. Dengel, S.R. Leone, Chem. Phys. Lett. 443, 333–336 (2007)CrossRef
11.
12.
go back to reference S.-Y. Kuo, F.-I. Lai, W.-C. Chen, W.-T. Lin, C.-N. Hsiao, H.-I. Lin, H.-C. Pan, Diam. Relat. Mater. 20, 1188–1192 (2011)CrossRef S.-Y. Kuo, F.-I. Lai, W.-C. Chen, W.-T. Lin, C.-N. Hsiao, H.-I. Lin, H.-C. Pan, Diam. Relat. Mater. 20, 1188–1192 (2011)CrossRef
13.
go back to reference H. He, Y. Cao, R. Fu, H. Wang, J. Huang, C. Huang, M. Wang, Z. Deng, J. Mater. Sci. Mater. Electron. 21, 676–681 (2010)CrossRef H. He, Y. Cao, R. Fu, H. Wang, J. Huang, C. Huang, M. Wang, Z. Deng, J. Mater. Sci. Mater. Electron. 21, 676–681 (2010)CrossRef
14.
go back to reference P.H. Chang, C.T. Liang, N.C. Chen, T.Y. Huang, Y.F. Chen, Diam. Relat. Mater. 15, 1179–1183 (2006)CrossRef P.H. Chang, C.T. Liang, N.C. Chen, T.Y. Huang, Y.F. Chen, Diam. Relat. Mater. 15, 1179–1183 (2006)CrossRef
15.
go back to reference A. Blant, T. Cheng, N. Jeffs, C. Foxon, C. Bailey, P. Harrison, A. Dent, J. Mosselmans, Mater. Sci. Eng. B 50, 38–41 (1997)CrossRef A. Blant, T. Cheng, N. Jeffs, C. Foxon, C. Bailey, P. Harrison, A. Dent, J. Mosselmans, Mater. Sci. Eng. B 50, 38–41 (1997)CrossRef
16.
go back to reference P.R. Chalker, D. Morrice, T.B. Joyce, T.C.Q. Noakes, P. Bailey, L. Considine, Diam. Relat. Mater. 9, 520–523 (2000)CrossRef P.R. Chalker, D. Morrice, T.B. Joyce, T.C.Q. Noakes, P. Bailey, L. Considine, Diam. Relat. Mater. 9, 520–523 (2000)CrossRef
17.
18.
go back to reference O. Tuna, W. Linhart, E. Lutsenko, M. Rzheutski, G. Yablonskii, T.D. Veal, C.F. McConville, C. Giesen, H. Kalisch, A. Vescan, J. Cryst. Growth 358, 51–56 (2012)CrossRef O. Tuna, W. Linhart, E. Lutsenko, M. Rzheutski, G. Yablonskii, T.D. Veal, C.F. McConville, C. Giesen, H. Kalisch, A. Vescan, J. Cryst. Growth 358, 51–56 (2012)CrossRef
19.
go back to reference A. Hanser, A. Banks, R. Davis, B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. Strunk, Mater. Sci. Semicon. Proc. 3, 163–171 (2000)CrossRef A. Hanser, A. Banks, R. Davis, B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. Strunk, Mater. Sci. Semicon. Proc. 3, 163–171 (2000)CrossRef
20.
go back to reference E. Arslan, M.K. Ozturk, H. Çakmak, P. Demirel, S. Ozcelik, E. Ozbay, J. Mater. Sci. Mater. Electron. 24, 4471–4481 (2013)CrossRef E. Arslan, M.K. Ozturk, H. Çakmak, P. Demirel, S. Ozcelik, E. Ozbay, J. Mater. Sci. Mater. Electron. 24, 4471–4481 (2013)CrossRef
21.
go back to reference Y.-S. Lin, H.-H. Kuo, S.-W. Feng, J. Mater. Sci. Mater. Electron. 23, 1830–1834 (2012)CrossRef Y.-S. Lin, H.-H. Kuo, S.-W. Feng, J. Mater. Sci. Mater. Electron. 23, 1830–1834 (2012)CrossRef
22.
go back to reference K. Ramaiah, D. Huang, M. Reshchikov, F. Yun, H. Morkoc, J. Jasinski, Z. Liliental-Weber, C. Sone, S. Park, K. Lee, J. Mater. Sci. Mater. Electron. 14, 233–245 (2003)CrossRef K. Ramaiah, D. Huang, M. Reshchikov, F. Yun, H. Morkoc, J. Jasinski, Z. Liliental-Weber, C. Sone, S. Park, K. Lee, J. Mater. Sci. Mater. Electron. 14, 233–245 (2003)CrossRef
24.
go back to reference S. Alkis, M. Alevli, S. Burzhuev, H.A. Vural, A.K. Okyay, B. Ortaç, J. Nanopart. Res. 14, 1–6 (2012)CrossRef S. Alkis, M. Alevli, S. Burzhuev, H.A. Vural, A.K. Okyay, B. Ortaç, J. Nanopart. Res. 14, 1–6 (2012)CrossRef
25.
go back to reference Z. Chen, Y. Li, C. Cao, S. Zhao, S. Fathololoumi, Z. Mi, X. Xu, JACS 134, 780–783 (2012)CrossRef Z. Chen, Y. Li, C. Cao, S. Zhao, S. Fathololoumi, Z. Mi, X. Xu, JACS 134, 780–783 (2012)CrossRef
26.
27.
go back to reference K. Sardar, F.L. Deepak, A. Govindaraj, M. Seikh, C. Rao, Small 1, 91–94 (2005)CrossRef K. Sardar, F.L. Deepak, A. Govindaraj, M. Seikh, C. Rao, Small 1, 91–94 (2005)CrossRef
29.
go back to reference M. Gopalakrishnan, V. Purushothaman, P.S. Venkatesh, V. Ramakrishnan, K. Jeganathan, Mater. Res. Bull. 47, 3323–3329 (2012)CrossRef M. Gopalakrishnan, V. Purushothaman, P.S. Venkatesh, V. Ramakrishnan, K. Jeganathan, Mater. Res. Bull. 47, 3323–3329 (2012)CrossRef
30.
go back to reference M. Qaeed, K. Ibrahim, R. Srivastava, M. Ali, A. Salhin, Mater Lett. 99, 128–130 (2013) CrossRef M. Qaeed, K. Ibrahim, R. Srivastava, M. Ali, A. Salhin, Mater Lett. 99, 128–130 (2013) CrossRef
31.
go back to reference M.A. Qaeed, K. Ibrahim, K.M.A. Saron, A. Salhin, Superlattice Microstruct. 64, 70–77 (2013)CrossRef M.A. Qaeed, K. Ibrahim, K.M.A. Saron, A. Salhin, Superlattice Microstruct. 64, 70–77 (2013)CrossRef
32.
go back to reference M. Qaeed, K. Ibrahim, K. Saron, A. Salhin, J. Sol Energy 97, 614–619 (2013)CrossRef M. Qaeed, K. Ibrahim, K. Saron, A. Salhin, J. Sol Energy 97, 614–619 (2013)CrossRef
33.
go back to reference Z. Xu, C. Shen, Y. Hou, H. Gao, S. Sun, Chem. Mater. 21, 1778–1780 (2009)CrossRef Z. Xu, C. Shen, Y. Hou, H. Gao, S. Sun, Chem. Mater. 21, 1778–1780 (2009)CrossRef
35.
go back to reference M. Ueno, M. Yoshida, A. Onodera, O. Shimomura, K. Takemura, Phys. Rev. B 49, 14–21 (1994)CrossRef M. Ueno, M. Yoshida, A. Onodera, O. Shimomura, K. Takemura, Phys. Rev. B 49, 14–21 (1994)CrossRef
37.
go back to reference R. Gupta, N. Mamidi, K. Ghosh, S. Mishra, P. Kahol, J. Optoelectron. Adv. Mater. 9, 2211–2216 (2007) R. Gupta, N. Mamidi, K. Ghosh, S. Mishra, P. Kahol, J. Optoelectron. Adv. Mater. 9, 2211–2216 (2007)
38.
go back to reference G. Kaczmarczyk, A. Kaschner, S. Reich, A. Hoffmann, C. Thomsen, D. As, A. Lima, D. Schikora, K. Lischka, R. Averbeck, Appl. Phys. Lett. 76, 2122–2124 (2000)CrossRef G. Kaczmarczyk, A. Kaschner, S. Reich, A. Hoffmann, C. Thomsen, D. As, A. Lima, D. Schikora, K. Lischka, R. Averbeck, Appl. Phys. Lett. 76, 2122–2124 (2000)CrossRef
39.
Metadata
Title
The effective role of time in synthesising InN by chemical method at low temperature
Authors
M. A. Qaeed
K. Ibrahim
K. M. A. Saron
Q. N. Abdullah
Nezar G. Elfadill
Saleh H. Abud
Khaled M. Chahrour
Publication date
01-03-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 3/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-1737-1

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