Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Computational Electronics
Published in: Journal of Computational Electronics 2/2019

17-12-2018

The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island

Authors: Vahideh Khademhosseini, Daryoosh Dideban, Mohammad Taghi Ahmadi, Razali Ismail

Published in: Journal of Computational Electronics | Issue 2/2019

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

The single-electron transistor (SET) principle of operation is based on the Coulomb blockade (CB) phenomenon. The island material and associated defects have a direct impact on the range of the CB effect and the operating speed of the SET. In this research, the impact of vacancy defects on a SET-based on a carbon nanotube (CNT) is investigated. The results show that a SET with six atomic vacancies exhibits the lowest Coulomb diamond area and highest operating speed. The results also show that increasing the distance between two single vacancies decreases the Coulomb diamond area of the SET. Moreover, the location of the vacancies in the CNT and its effect on the operation of the SET are investigated. The comparison study shows that an antidote vacancy in the CNT close to the drain side results in the shortest CB range and narrowest bandgap, resulting in the CNT SET with the highest operating speed.
previous article Theoretical investigation of the structural, electronic and thermodynamic properties of cubic and orthorhombic XZrS3 (X = Ba,Sr,Ca) compounds
next article Time-dependent equivalent circuit modeling of ferromagnetic single electron transistors

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
KhademHosseini, V., Ahmadi, M.T., Afrang, S., Ismail, R.: Current analysis and modelling on fullerene single electron transistor at room temperature. J. Electron. Mater. 46(7), 4294–4298 (2017)CrossRef
2.
KhademHosseini, V., Dideban, D., Ahmadi, M.T., Ismail, R.: An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor. AEU Int. J. Electron. Commun. 90, 97–102 (2018)CrossRef
3.
KhademHosseini, V., Ahmadi, M.T., Ismail, R.: Analysis and modeling of fullerene single electron transistor based on quantum dot arrays at room temperature. J. Electron. Mater. 47, 4799–4806 (2018)CrossRef
4.
KhademHosseini, V., Dideban, D., Ahmadi, M.T., Ismail, R.: Single electron transistor scheme based on multiple quantum dot islands: carbon nanotube and fullerene. ECS J. Solid State Sci. Technol. 7(10), M145–M152 (2018)CrossRef
5.
Zoghi, M., Yazdanpanah Goharrizi, A., Saremi, M.: Band gap tuning of armchair graphene nanoribbons by using antidotes. J. Electron. Mater. 46(1), 340–346 (2017)CrossRef
6.
Yazdanpanah Goharrizi, A., Zoghi, M., Saremi, M.: Armchair graphene nanoribbon resonant tunneling diodes using antidote and BN doping. IEEE Trans. Electron Devices 63(9), 3761–3768 (2016)CrossRef
7.
Saremi, M., Saremi, M., Niazi, H., Yazdanpanah Goharrizi, A.: Modeling of lightly doped drain and source graphene nanoribbon field effect transistors. Superlattices Microstruct. 60, 67–72 (2013)CrossRef
8.
Banhart, F.: Irradiation of carbon nanotubes with a focused electron beam in the electron microscope. J. Mater. Sci. 41(4), 4505–4511 (2006)CrossRef
9.
Gülseren, O., Yildirim, T., Ciraci, S.: Systematic ab initio study of curvature effects in carbon nanotubes. Phys. Rev. B 65, 153405 (2002)CrossRef
10.
Mawhinney, D.B., Naumenko, V., Kuznetsova, A., Yates, J.T., Smalley, R.E.: Surface defect site density on single walled carbon nanotubes by titration. Chem. Phys. Lett. 324, 213–216 (2000)CrossRef
11.
Hashimoto, A., Suenaga, K., Gloter, A., Urita, K., Iijima, S.: Direct evidence for atomic defects in graphene layers. Nature 430, 870 (2004)CrossRef
12.
Tien, L.G., Tsai, C.H., Li, F.Y., Lee, M.H.: Influence of vacancy defect density on electrical properties of armchair single wall carbon nanotube. Diam. Relat. Mater. 17, 563–566 (2008)CrossRef
13.
Lee, A.T., Kang, Y.J., Chang, K.J.: Transport properties of carbon nanotubes: effects of vacancy clusters and disorder. J. Phys. Chem. C 116, 1179–1184 (2012)CrossRef
14.
Rocha, A.R., Padilha, J.E., Fazzio, A., da Silva, A.J.R.: Transport properties of single vacancies in nanotubes. Phys. Rev. B 77, 153406 (2008)CrossRef
15.
Yu-Pin, L., Li-Gan, T., Chuen-Horng, T., Ming-Hsien, L., Feng-Yin, L.: Dependence of the electrical properties of defective single-walled carbon nanotubes on the vacancy density. Chin. Phys. B 20(8), 087303 (2011)CrossRef
16.
Benramache, S., Belahssen, O., Temam, H.B.: Effect of band gap energy on the electrical conductivity in doped ZnO thin film. J. Semicond. 35(7), 073001 (2014)CrossRef
17.
Talbo, V., Galdin-Retailleau, S., Valentin, A., Dollfus, P.: Physical simulation of silicon-nanocrystal-based single-electron transistors. IEEE Trans. Electron Devices 58(10), 3286 (2011)CrossRef
18.
Sée, J., Dollfus, P., Galdin, S., Hesto, P.: From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters. J. Comput. Electron. 5(1), 35–48 (2006)CrossRef
19.
Lientsching, G., Weymann, I., Hadley, P.: Simulating hybrid circuits of single-electron transistors and field-effect transistors. Jpn. J. Appl. Phys. 42, 6467–6472 (2003)CrossRef
20.
Kumar Sinha, P., Sankaranarayanan, S.: Single electron transistor and its simulation methods. Int. J. Eng. Dev. Res. 2(2), 1907–1925 (2014)
21.
22.
Grabert, H., Devoret, M.H.: Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures. Springer, Berlin (1992)CrossRef
23.
KhademHosseini, V., Ahmadi, M.T., Afrang, S., Ismail, R.: Analysis and simulation of coulomb blockade and coulomb diamonds in fullerene single electron transistors. J. Nanoelectron. Optoelectron. 13, 138–143 (2018)CrossRef
24.
Howlader, A.H., Islam, M.S., Tanaka, S., Makino, T., Hashimoto, A.: Vacancy and curvature effects on the phonon properties of single wall carbon nanotube. Jpn. J. Appl. Phys. 57(2S2), 02CB08 (2018)CrossRef
25.
Amjadipour, M., Viet Dao, D., Motta, N.: Vibration analysis of initially curved single walled carbon nanotube with vacancy defect for ultrahigh frequency nanoresonators. Microsyst. Technol. 22(5), 1115–1120 (2016)CrossRef
Metadata
Title
The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island
Authors
Vahideh Khademhosseini
Daryoosh Dideban
Mohammad Taghi Ahmadi
Razali Ismail
Publication date
17-12-2018
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 2/2019
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-018-01290-3

Other articles of this Issue 2/2019

Journal of Computational Electronics 2/2019 Go to the issue

OriginalPaper

Spin–orbit coupling effects on the electronic structure of two-dimensional silicon carbide

OriginalPaper

Transmission properties of metal mesh filters at 90 GHz

OriginalPaper

NAND flash memory device with ground plane in buried oxide for reduced short channel effects and improved data retention

OriginalPaper

Magnetic field sensor based on a magnetic-fluid-infiltrated photonic crystal L4 nanocavity and broadband W1 waveguide

OriginalPaper

Circular transmission resonances and magnetic field effects in a ring of quantum dots connected to external leads in the meta-configuration

OriginalPaper

A regularized adaptive spatial resolution technique for fast and accurate analysis of metal–dielectric crossed gratings