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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 3/2019

11-12-2018

The mechanism of filament formation in Ag doped Ge–Se resistive switching cell

Authors: Bo Zhang, Vitezslav Zima, Petr Kutalek, Tomas Mikysek, Tomas Wagner

Published in: Journal of Materials Science: Materials in Electronics | Issue 3/2019

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Abstract

The AgGeSe2 solid state electrolyte has been studied in resistive switching. According to the I–V relationship, the possible mechanisms, including the SCLC (space-charge-limited current) model is applied to explain the result of experiments. The conductive filament formation is found to be related to the Schottky barrier between the electrode and electrolyte.
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Metadata
Title
The mechanism of filament formation in Ag doped Ge–Se resistive switching cell
Authors
Bo Zhang
Vitezslav Zima
Petr Kutalek
Tomas Mikysek
Tomas Wagner
Publication date
11-12-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 3/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-0519-6

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