Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 2/2017

02-09-2016

The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc

Authors: Soner Özen, Şadan Korkmaz, Volkan Şenay, Suat Pat

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2017

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

This study focuses on characterization and understanding of the substrate effect on Ge doped GaN thin films coated onto transparent substrates. The produced films were deposited onto unheated glass and unheated polyethylene terephthalate by using thermionic vacuum arc technique. Gallium nitride and germanium pellets were used in the thin film production. Reflectance, refractive index and thicknesses of Ge doped GaN thin films were measured by optical interferometer using Cauchy model for fitting. The transmittances were determined in the wavelength range between 200 and 1000 nm by using UV–Vis double beam spectrophotometer. The optical Tauc method was used to determine the band gap energies of produced thin films. Surface morphologies of produced thin films were characterized by atomic force microscopy and also field emission scanning electron microscopy. In conclusion, the substrate effect on the optical and morphological properties of the produced thin films was observed.
previous article Investigation for the synthesis of hierarchical Co3O4@MnO2 nanoarrays materials and their application for supercapacitor
next article Enhancing persistent luminescence and photocatalytic properties in Ti as a trap center in ZnGa2O4

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
Y. Oshima, T. Yoshida, K. Watanabe, T. Mishima, Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy. J. Cryst. Growth 312, 3569–3573 (2010)CrossRef
2.
T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto, H. Kawanishi, Band-gap energy and effective mass of BGaN. Jpn. J. Appl. Phys. 39, 2389 (2000)CrossRef
3.
L. Teles, L. Scolfaro, J. Leite, J. Furthmüller, F. Bechstedt, Spinodal decomposition in BxGa1−xN and BxAl1−xN alloys. Appl. Phys. Lett. 80, 1177–1179 (2002)CrossRef
4.
S. Pat, Ş. Korkmaz, S. Özen, V. Şenay, GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA). Mater. Chem. Phys. 159, 1–5 (2015)CrossRef
5.
D.-W. Kang, J.-Y. Kwon, J. Shim, H.-M. Lee, M.-K. Han, Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells. Sol. Energy Mater. Sol. C 105, 317–321 (2012)CrossRef
6.
S.L. Selvaraj, A. Watanabe, T. Egawa, Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate. Appl. Phys. Lett. 98, 252105 (2011)CrossRef
7.
R. Kirste, M.P. Hoffmann, E. Sachet, M. Bobea, Z. Bryan, I. Bryan, C. Nenstiel, A. Hoffmann, J.-P. Maria, R. Collazo, Ge doped GaN with controllable high carrier concentration for plasmonic applications. Appl. Phys. Lett. 103, 242107 (2013)CrossRef
8.
F. Qian, Y. Li, S. Gradecak, D. Wang, C.J. Barrelet, C.M. Lieber, Gallium nitride-based nanowire radial heterostructures for nanophotonics. Nano Lett. 4, 1975–1979 (2004)CrossRef
9.
S. Nakamura, T. Mukai, M. Senoh, Si- and Ge-doped GaN films grown with GaN buffer layers. Jpn. J. Appl. Phys. 31, 2883 (1992)CrossRef
10.
A. Dadgar, J. Bläsing, A. Diez, A. Krost, Crack-free, highly conducting GaN layers on Si substrates by Ge doping. Appl. Phys. Express 4, 011001 (2011)CrossRef
11.
S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, A. Krost, High Si and Ge n-type doping of GaN doping-limits and impact on stress. Appl. Phys. Lett. 100, 122104 (2012)CrossRef
12.
A.B. Greytak, L.J. Lauhon, M.S. Gudiksen, C.M. Lieber, Growth and transport properties of complementary germanium nanowire field-effect transistors. Appl. Phys. Lett. 84, 4176–4178 (2004)CrossRef
13.
P. Hageman, W. Schaff, J. Janinski, Z. Liliental-Weber, n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy. J. Cryst. Growth 267, 123–128 (2004)CrossRef
14.
S. Özen, V. Şenay, S. Pat, Ş. Korkmaz, Investigation on the morphology and surface free energy of the AlGaN thin film. J. Alloys Compd. 653, 162–167 (2015)CrossRef
15.
S. Özen, V. Şenay, S. Pat, Ş. Korkmaz, The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc. Scanning 38, 14–20 (2015)CrossRef
16.
S. Özen, V. Şenay, S. Pat, Ş. Korkmaz, Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA). J. Mater. Sci.: Mater. Electron. 26, 5060–5064 (2015)
17.
K. Motoki, M. Ueno, Oxygen doping method to gallium nitride single crystal substrate, in, Google Patents, 2014
18.
M. Feneberg, K. Lange, C. Lidig, M. Wieneke, H. Witte, J. Bläsing, A. Dadgar, A. Krost, R. Goldhahn, Anisotropy of effective electron masses in highly doped nonpolar GaN. Appl. Phys. Lett. 103, 232104 (2013)CrossRef
19.
E. Schubert, I. Goepfert, W. Grieshaber, J. Redwing, Optical properties of Si-doped GaN. Appl. Phys. Lett. 71, 921–923 (1997)CrossRef
20.
P. Tchoulfian, F. Donatini, F. Levy, B. Amstatt, P. Ferret, J. Pernot, High conductivity in Si-doped GaN wires. Appl. Phys. Lett. 102, 122116 (2013)CrossRef
21.
M.L. Colussi, R.J. Baierle, R.H. Miwa, Doping effects of C, Si and Ge in wurtzite [0001] GaN, AlN, and InN nanowires. J. Appl. Phys. 110, 033709 (2011)CrossRef
22.
S. Özen, V. Şenay, S. Pat, Ş. Korkmaz, Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates. Mater. Res. Express 3, 045012 (2016)CrossRef
23.
N. Zographos, A. Erlebach, Process simulation of dopant diffusion and activation in germanium. Phys. Status Solidi (a) 211, 143–146 (2014)CrossRef
24.
T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda, Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method. Appl. Phys. Lett. 103, 172103 (2013)CrossRef
25.
H.T. Chen, Y.F. Cheung, H.W. Choi, S.C. Tan, S. Hui, Reduction of thermal resistance and optical power loss using thin-film light-emitting diode (LED) structure. Ind Electron IEEE Trans 62, 6925–6933 (2015)CrossRef
26.
L. Foglia, L. Bogner, M. Wolf, J. Stähler, Localization-dependent charge separation efficiency at an organic/inorganic hybrid interface. Chem. Phys. Lett. 646, 25–30 (2016)CrossRef
27.
C. Han, Y. Du, X. Meng, F. Wu, Y. Fang, Enhancement of up-conversion emissions in ZnO: Er3+–Yb3+ after Gd2 O3 surface modification. Appl. Surf. Sci. 274, 60–63 (2013)CrossRef
28.
J.F. Sánchez-Royo, G. Muñoz-Matutano, M. Brotons-Gisbert, J.P. Martínez-Pastor, A. Segura, A. Cantarero, R. Mata, J. Canet-Ferrer, G. Tobias, E. Canadell, Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes. Nano Res. 7, 1556–1568 (2014)CrossRef
29.
J.-H. Yang, L. Shi, L.-W. Wang, S.-H. Wei, Non-radiative carrier recombination enhanced by two-level process: a first-principles study. Sci. Rep. 6, 21712 (2016)CrossRef
30.
I.-H. Lee, J. Lee, P. Kung, F. Sanchez, M. Razeghi, Band-gap narrowing and potential fluctuation in Si-doped GaN. Appl. Phys. Lett. 74, 102–104 (1999)CrossRef
31.
M. Feneberg, S. Osterburg, K. Lange, C. Lidig, B. Garke, R. Goldhahn, E. Richter, C. Netzel, M.D. Neumann, N. Esser, Band gap renormalization and Burstein–Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm−3. Phys. Rev. B 90, 075203 (2014)CrossRef
32.
M. Huang, A. Dumon, C.-W. Nan, Effect of Si, In and Ge doping on high ionic conductivity of Li7La3Zr2O12. Electrochem. Commun. 21, 62–64 (2012)CrossRef
33.
S. Özen, V. Şenay, S. Pat, Ş. Korkmaz, Optical, morphological properties and surface energy of the transparent Li4Ti5O12 (LTO) thin film as anode material for secondary type batteries. J. Phys. D Appl. Phys. 49, 105303 (2016)CrossRef
34.
D. Herman, J. Sicha, J. Musil, Magnetron sputtering of TiOxNy films. Vacuum 81, 285–290 (2006)CrossRef
35.
M. Zhang, P. Bhattacharya, W. Guo, InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop. Appl. Phys. Lett. 97, 011103 (2010)CrossRef
36.
I.-K. Park, S.-J. Park, Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation. Appl. Phys. Express 4, 042102 (2011)CrossRef
37.
J. Brown, F. Wu, P. Petroff, J. Speck, GaN quantum dot density control by rf-plasma molecular beam epitaxy. Appl. Phys. Lett. 84, 690–692 (2004)CrossRef
Metadata
Title
The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc
Authors
Soner Özen
Şadan Korkmaz
Volkan Şenay
Suat Pat
Publication date
02-09-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 2/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5657-0

Other articles of this Issue 2/2017

Journal of Materials Science: Materials in Electronics 2/2017 Go to the issue

OriginalPaper

Efficient visible-light driven photocatalysts: coupling TiO2(AB) nanotubes with g-C3N4 nanoflakes

OriginalPaper

Nanocrystalline samarium tungstate: facile morphology-controlled preparation, characterization and investigation of optical and photocatalytic properties

OriginalPaper

Photocatalytic and antibacterial activities of eco-friendly green synthesized ZnO and NiO nanoparticles

OriginalPaper

The effect of pH on the photocatalytic degradation of methyl orange using decorated ZnO nanoparticles with SnO2 nanoparticles

OriginalPaper

Synthesis and characterization of Cd-doped ZnMn2O4 microspheres as supercapacitor electrodes

OriginalPaper

Size-controlled Si quantum dots embedded in B-doped SiNx/Si3N4 superlatice for Si quantum dot solar cells