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Published in:
24-04-2019
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2019
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Abstract
In the present study, firstly, a 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (n), barrier height (\( \Phi_{B} \)) and series resistance (\( R_{s} \)) values of the prepared structure from the I-V data have been found at 1.08, 0.78 eV and 240 Ω at room temperature (300 K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220–380 K), the \( \Phi_{b0} \) and A* values from the ordinate intercept and the slope of the modified Richardson curve of \( \ln \left( {I_{0} /T^{2} } \right) - \left( {q^{2} \sigma_{s}^{2} /2k^{2} T^{2} } \right) \) versus 1/T plot which has been found to be 0.97 eV and 114 A/cm2K2, respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal–organic layer-semiconductor diode as compared to the Au/n-Si metal–semiconductor (MS) diode.