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Semiconductors
Published in: Semiconductors 4/2009

01-04-2009 | Physics of Semiconductor Devices

The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP

Authors: V. V. Kabanov, E. V. Lebiadok, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Schemelev, V. V. Sherstnev, A. P. Astakhova, Yu. P. Yakovlev

Published in: Semiconductors | Issue 4/2009

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previous article Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes
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Metadata
Title
The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP
Authors
V. V. Kabanov
E. V. Lebiadok
A. G. Ryabtsev
G. I. Ryabtsev
M. A. Schemelev
V. V. Sherstnev
A. P. Astakhova
Yu. P. Yakovlev
Publication date
01-04-2009
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 4/2009
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782609040174

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