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Published in: Journal of Materials Science: Materials in Electronics 10/2013

01-10-2013

Thermal stress driven Sn whisker growth: in air and in vacuum

Authors: Jung-Lae Jo, Shijo Nagao, Tohru Sugahara, Masanobu Tsujimoto, Katsuaki Suganuma

Published in: Journal of Materials Science: Materials in Electronics | Issue 10/2013

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Abstract

Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications.

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Metadata
Title
Thermal stress driven Sn whisker growth: in air and in vacuum
Authors
Jung-Lae Jo
Shijo Nagao
Tohru Sugahara
Masanobu Tsujimoto
Katsuaki Suganuma
Publication date
01-10-2013
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 10/2013
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1336-6

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