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Semiconductors
Published in: Semiconductors 3/2014

01-03-2014 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots

Authors: A. N. Reznitsky, A. A. Klochikhin, M. V. Eremenko

Published in: Semiconductors | Issue 3/2014

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previous article Electron-phonon interaction in short-period (GaAs) m (AlAs) n (001) superlattices
next article Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel

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Metadata
Title
Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots
Authors
A. N. Reznitsky
A. A. Klochikhin
M. V. Eremenko
Publication date
01-03-2014
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 3/2014
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782614030221

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Electron-phonon interaction in short-period (GaAs) m (AlAs) n (001) superlattices

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Effect of annealing in liquid cadmium upon photoluminescence in polycrystalline cadmium telluride grown under nonequilibrium conditions

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Si1 − x Ge x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

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Physics of Semiconductor Devices

Optimization of carrier mobility in luminescence layers based on europium β-diketonates in hybrid light-emitting structures

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