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Semiconductors
Published in: Semiconductors 3/2014

01-03-2014 | Fabrication, Treatment, and Testing of Materials and Structures

Si1 − x Ge x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

Authors: S. A. Denisov, S. A. Matveev, V. Yu. Chalkov, V. G. Shengurov, Yu. N. Drozdov, M. V. Stepikhova, D. V. Shengurov, Z. F. Krasilnik

Published in: Semiconductors | Issue 3/2014

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previous article Formation of two-layer composite-on-insulator structures based on porous silicon and SnO x . Study of their electrical and gas-sensing properties
next article Effect of features of the technology of polycrystalline CdTe growth on the conductivity and deep level spectrum after annealing

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Metadata
Title
Si1 − x Ge x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates
Authors
S. A. Denisov
S. A. Matveev
V. Yu. Chalkov
V. G. Shengurov
Yu. N. Drozdov
M. V. Stepikhova
D. V. Shengurov
Z. F. Krasilnik
Publication date
01-03-2014
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 3/2014
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782614030099

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