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Published in: Journal of Materials Science 15/2012

01-08-2012

Thermoelectric properties of Ho-doped Bi0.88Sb0.12

Authors: K. C. Lukas, G. Joshi, K. Modic, Z. F. Ren, C. P. Opeil

Published in: Journal of Materials Science | Issue 15/2012

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Abstract

The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.

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Metadata
Title
Thermoelectric properties of Ho-doped Bi0.88Sb0.12
Authors
K. C. Lukas
G. Joshi
K. Modic
Z. F. Ren
C. P. Opeil
Publication date
01-08-2012
Publisher
Springer US
Published in
Journal of Materials Science / Issue 15/2012
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-012-6463-6

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