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Published in:
29-01-2019
Thermoelectric properties of indium-doped zinc oxide sintered in an argon atmosphere
Published in: Journal of Materials Science: Materials in Electronics | Issue 5/2019
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Abstract
Solid-state reaction (SSR) was used to synthesize samples of (Zn1–xInx)O, with x = 0.05, 0.02, 0.01, 0.005 and 0.00 respectively. All compositions were sintered in an argon atmosphere and their thermoelectric properties, phase constituents, and microstructures were investigated. Single-phase ceramic was formed for each composition with dense microstructure. In3+ doping lowered the electrical resistivity of ZnO and in the present study, lower value of electrical resistivity ρ ~ 1.884 mΩ·cm and highest power factor (P.F) ~ 4.660 × 10−4 WK−2 m−1 at 693.4 °C respectively are obtained for the composition with x = 0.02. The electrical resistivities (ρ) of all compositions were regulated. The tuned and regulated (ρ) are expected to be helpful for future thermoelectric devices.