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2009 | OriginalPaper | Chapter

Thin-Film Poly-Si Formed by Flash Lamp Annealing

Author : Keisuke Ohdaira

Published in: Crystal Growth of Si for Solar Cells

Publisher: Springer Berlin Heidelberg

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Flash lamp annealing (FLA) has attracted attentions as a technique of rapidly crystallizing precursor a-Si films to form poly-Si films with high crystallinity on low-cost glass substrates. In this chapter, a brief explanation on fundamental physics typically seen in nonthermal equilibrium annealing and in utilization of metastable a-Si as precursor films have been given. Recent findings concerning FLA-triggered crystallization of micrometer-order-thick a-Si films and microstructures of the poly-Si films are also introduced.

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previous chapter Vapor Phase Epitaxy
next chapter Polycrystalline Silicon Thin-Films Formed by the Aluminum-Induced Layer Exchange (ALILE) Process
Metadata
Title
Thin-Film Poly-Si Formed by Flash Lamp Annealing
Author
Keisuke Ohdaira
Copyright Year
2009
Publisher
Springer Berlin Heidelberg
Book
Crystal Growth of Si for Solar Cells

Print ISBN: 978-3-642-02043-8

Electronic ISBN: 978-3-642-02044-5

Copyright Year: 2009

DOI
https://doi.org/10.1007/978-3-642-02044-5_11