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Published in:
2009 | OriginalPaper | Chapter
Vapor Phase Epitaxy
Author : Mustapha Lemiti
Published in: Crystal Growth of Si for Solar Cells
Publisher: Springer Berlin Heidelberg
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The main advantages of the vapor phase epitaxy (VPE) are the ability to grow very good quality layers, with high growth rate (higher than
μ
m min
–1
). Its principle is relatively simple and allows great flexibility (change in doping level or type of doping …). In addition, the VPE can handle several large wafers, which is particularly desirable for photovoltaic applications. In this chapter, we introduce the principle of this method before discussing the theories and modeling for understanding the mechanisms governing the kinetics of crystal growth. It is followed by a detailed description of SiH
2
Cl
2
/H
2
system, well adapted to the growth of films for photovoltaic applications.