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Journal of Computational Electronics
Published in: Journal of Computational Electronics 3/2020

22-04-2020

Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)

Authors: T. Venish Kumar, N. B. Balamurugan

Published in: Journal of Computational Electronics | Issue 3/2020

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Abstract

A simple physics-based three-dimensional (3-D) analytical model for AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs) is presented. The model accurately predicts the short-channel effects (SCEs) in the channel region for various device dimensions, viz. channel length and width, by solving the three-dimensional Poisson equation. The effects of the barrier layer (AlInSb) thickness and the high doping concentration on the threshold voltage are also considered. Analytical expressions for the surface potential and threshold voltage are derived, and the analytical results closely match those obtained from Sentaurus technology computer-aided design (TCAD) simulations. The drain current and transconductance of the AlInSb/AlSb/InSb double-gate HEMT device are compared with experimental data obtained for a quantum-well field-effect transistor (QWFET). The proposed AlInSb/AlSb/InSb double-gate HEMT shows excellent properties for use in high-speed and low-power applications.
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Metadata
Title
Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)
Authors
T. Venish Kumar
N. B. Balamurugan
Publication date
22-04-2020
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 3/2020
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-020-01498-2

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