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Journal of Electronic Materials
Published in: Journal of Electronic Materials 9/2023

14-07-2023 | Original Research Article

Tracing of Ammonia Gas by Solution-Combustion-Derived Pristine and Nb-Doped TiO2 Films: Beneficial Impact of Crystallinity and Adsorbed Oxygen on the Gas Response

Authors: Robbi Vivek Vardhan, G. Manjunath, P. Nagaraju, Saumen Mandal

Published in: Journal of Electronic Materials | Issue 9/2023

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Abstract

The current work delivers room-temperature ammonia (NH3) gas-detectable pristine, Nb-doped TiO2 air- and vacuum-annealed films obtained through the solution-combustion process. Polycrystalline anatase crystal structured films without any dopant oxide phases were processed at 400°C on glass substrates. The crystallinity was higher in pristine films than in doped films; the morphological features were similar in all the films. The films were > 50% transparent, and the estimated optical energy band gap was greater in doped films than in pristine films. All the films detected NH3 gas (25 ppm to 100 ppm) at room temperature, and the gas response was highly dependent on the crystallinity and relative area fraction of adsorbed oxygen (% of OA). The vacuum-annealed pristine film exhibited a better gas response than the other films at all NH3 gas concentrations due to high crystallinity and % of OA (10.15%). The film demonstrated maximum gas response of ~16 towards 100 ppm of NH3 gas and displayed good selectivity. Even though the doping reduced the crystallite size from ~17 nm to ~9 nm, it also diminished the crystallinity of the films, which significantly impacted the deterioration of their gas response.
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Appendix
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Metadata
Title
Tracing of Ammonia Gas by Solution-Combustion-Derived Pristine and Nb-Doped TiO2 Films: Beneficial Impact of Crystallinity and Adsorbed Oxygen on the Gas Response
Authors
Robbi Vivek Vardhan
G. Manjunath
P. Nagaraju
Saumen Mandal
Publication date
14-07-2023
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 9/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-023-10577-6

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