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Journal of Materials Science: Materials in Electronics

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01-10-2011

Two-photon absorption laser assisted device alteration using continuous wave 1,340 nm laser

Authors: Baohua Niu, Patrick Pardy, Jerry Fortier, Mel Ortega, Travis Eiles

Published in: Journal of Materials Science: Materials in Electronics | Issue 10/2011

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Abstract

We report several cases of two photon absorption (TPA) laser assisted device alteration (LADA) using continuous wave (CW) 1,340 nm laser in Si Complimentary Metal-Oxide Semiconductor (CMOS) Integrated Circuits (IC). Two photon absorption using CW 1,340 nm laser in Si was confirmed by photon beam induced photocurrent measurements. TPA LADA showed greater than two times better resolution in critical timing circuit defect localization and debug application, when compared with traditional single photon absorption (SPA) LADA with CW 1,064 nm laser. A simplified analysis on the resolution improvements presented here showed in good agreement with our experimental observations. Further enhancements of this technology are outlined, which we believe will enable this technology for critical timing circuit debug capabilities well into the future generations of Si CMOS Debug applications.

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Title: Two-photon absorption laser assisted device alteration using continuous wave 1,340 nm laser
Authors: Baohua Niu
Patrick Pardy
Jerry Fortier
Mel Ortega
Travis Eiles
Publication date: 01-10-2011
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 10/2011
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-011-0458-y

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