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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 5/2008

01-05-2008

Two-step annealing of hot wire chemical vapor deposited a-Si:H films

Authors: B. Roy, R. C. Reedy, D. W. Readey

Published in: Journal of Materials Science: Materials in Electronics | Issue 5/2008

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Abstract

A two-step annealing process was used to investigate the effect of dehydrogenation on crystallization and grain growth of low and high hydrogen content hot wire chemical vapor deposited (HWCVD) a-Si:H films. A low temperature pre-annealing followed by a rapid thermal annealing step at 600 °C was carried out. For the high hydrogen content film XRD (111) peak narrowed quite a bit, while opposite effect was observed for the low hydrogen content film. According to the grain sizes as calculated from TEM images, grain sizes of both of the two-step annealed high and low hydrogen content films are smaller than that of the single stage annealed film.
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Metadata
Title
Two-step annealing of hot wire chemical vapor deposited a-Si:H films
Authors
B. Roy
R. C. Reedy
D. W. Readey
Publication date
01-05-2008
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 5/2008
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-007-9358-6

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