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Published in: Journal of Materials Science: Materials in Electronics 18/2017

30-05-2017

Usage of electron back scattering diffraction for investigation of buried damage layer underneath a single crystalline diamond surface

Authors: B. P. Sorokin, V. S. Bormashov, E. V. Korostilev, A. S. Novoselov, M. A. Doronin, K. S. Kravchuk, V. D. Blank

Published in: Journal of Materials Science: Materials in Electronics | Issue 18/2017

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Abstract

Electron back scattering diffraction was applied as attempt of control of buried damage layer under the single-crystalline diamond surface. A number of approaches for diamond polishing were developed, and clear anisotropy of wear rate for the (100), (110) and (111) planes was observed. Several crystalline orientations of synthetic and natural diamonds were investigated, and no difference of EBSD patterns between the treated and natural facets was found. A modeling experiment on the fast electron penetration into diamond was fulfilled. Since the EBSD patterns were observed at lowest energies from 2 keV, the escape depth for backscattered electrons and BDL depth could be estimated as ~10–15 nm which could be compared with a few interplanar spacings only.

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Footnotes
1
Produced by Technological Institute for Superhard and Novel Carbon Materials (Moscow, Troitsk, Russia).
 
2
Produced by the NT-MDT, Russia.
 
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Metadata
Title
Usage of electron back scattering diffraction for investigation of buried damage layer underneath a single crystalline diamond surface
Authors
B. P. Sorokin
V. S. Bormashov
E. V. Korostilev
A. S. Novoselov
M. A. Doronin
K. S. Kravchuk
V. D. Blank
Publication date
30-05-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 18/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7185-y

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