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IEEE 754 Floating Point Pipelined Multiplier with Karatsuba for Mitigations of Area and Power Read chapter Read first chapter

2021 | OriginalPaper | Chapter

W-Band InP DDR IMPATTs for High Current Operation Near Avalanche Resonance

Authors : S. J. Mukhopadhyay, S. Banerjee, M. Mitra

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

Investigations are carried out on the space charge dependence of the negative resistances of avalanche and drift layers of double-drift region (DDR), indium phosphide (InP) and impact ionization avalanche transit time (IMPATT) diodes at high bias current levels near avalanche frequency by using computer simulation techniques. It is observed that DDR InP diodes behave like uniformly avalanching p-i-n diodes under the above situation, and the device negative resistance degrades sharply above a bias current density of 3 × 108 A/m2.

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Metadata
Title
W-Band InP DDR IMPATTs for High Current Operation Near Avalanche Resonance
Authors
S. J. Mukhopadhyay
S. Banerjee
M. Mitra
Copyright Year
2021
Publisher
Springer Singapore
Book
Computers and Devices for Communication

Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-8366-7_38