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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 1/2016

05-10-2015

X-ray DC response of a simple photoconductive detector based on CdZnTe film

Authors: Jun Tao, Haitao Xu, Yuelu Zhang, Hua Meng, Huanhuan Ji, Huang Jian, Run Xu, Linjun Wang, Yicheng Lu

Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2016

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Abstract

CdZnTe thin films were deposited on glass substrates by close-spaced sublimation method and then annealed in vacuum. The structure, morphology and composition are investigated by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, respectively. The CdZnTe film detector shows a linear X-ray response, which is about one order of magnitude lower than that of the single crystalline CdZnTe sample. The mobility and lifetime product of the CdZnTe film is estimated to be around 6.5 × 10−6cm2/V. Time dependent X-ray response shows the increase of photocurrent with time at the first 20 min for the film detector, indicating a filling of traps in the forbidden gap.
previous article Impedance spectroscopy analysis of DH6T:PCBM bulk heterojunction incorporating Gaq3: experiment and model
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Metadata
Title
X-ray DC response of a simple photoconductive detector based on CdZnTe film
Authors
Jun Tao
Haitao Xu
Yuelu Zhang
Hua Meng
Huanhuan Ji
Huang Jian
Run Xu
Linjun Wang
Yicheng Lu
Publication date
05-10-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 1/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3800-y

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