1/f Noise in MOSTs: Faster is Noisier

Circuit-simulation-oriented equations (SPICE and BSIM3) for the 1/f noise are discussed and their fitting parameters are translated in the 1/f noise parameter α. The effect of scaling down on the 1/f noise is studied in the ohmic region as well as in saturation and sub-threshold. A prospective for scaling down is given for channel length L > 0.12 μm where velocity saturation becomes dominant. A relation is proposed between the 1/f noise corner frequency f _c , where the 1/f noise is equal to the thermal noise, and the unit current gain frequency f _I . Faster devices (with higher f _T ) are inherently noisier considering f _c . Approximately holds, 10-4f _T > f _c > 10-3f _T .