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Journal of Materials Science: Materials in Electronics

Published in:

23-04-2019

A detailed study on optical properties of InGaN/GaN/Al₂O₃ multi quantum wells

Authors: Ahmet Kürşat Bilgili, Ömer Akpınar, Mustafa Kemal Öztürk, Süleyman Özçelik, Zekiye Suludere, Ekmel Özbay

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2019

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Abstract

In this study optical properties of InGaN/GaN/Al₂O₃ multi-quantum well (MQW) structures are investigated in detail. Three samples containing InGaN/GaN/Al₂O₃ MQWs are grown by using metal organic chemical vapor deposition technique. Sapphire (6H–Al₂O₃) is used as the substrate. Forbidden energy band gaps (E_g) of these three samples are determined from photoluminescence and absorption spectra. Results gained from these two spectra are compared with each other. It is found that E_g values are between 2 and 3 eV. For determining refraction index, absorption coefficients, extinction coefficients and thickness of the films a rare method called Swanepoel envelope method is used. It is seen that results gained from this method are consistent with those in literature.

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Title: A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells
Authors: Ahmet Kürşat Bilgili
Ömer Akpınar
Mustafa Kemal Öztürk
Süleyman Özçelik
Zekiye Suludere
Ekmel Özbay
Publication date: 23-04-2019
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 11/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-01379-w

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