A high sensitive graphene piezoresistive MEMS pressure sensor by integration of rod beams in silicon diaphragm for low pressure measurement application

MEMS piezoresistive pressure sensors are most widely explored for various applications such as industrial, automotive and medical field. Each application covers a wide operating range from very low pressure to the higher pressure. In this paper a novel structure is designed by introducing the local stiffness in the diaphragm membrane for low pressure measurement. Rod beams at the diaphragm with combination of graphene piezoresistors, improves overall performance of the pressure sensor in terms of sensitivity. At higher temperature and higher pressure, a noticeable sensitivity is achieved which is compared to the previous design of graphene pressure sensor without rod beam structure. At room temperature (25 °C), sensitivity of pressure sensor with rod beam structure is 6.28 mV/psi. At 30 °C, the sensitivity is 58% higher than sensitivity of pressure sensor without rod beam structure for low-pressure specific range.